MicroLED
MicroLED is looking forward to be the most common display unit of next generation. However, MicroLED process is limited by the uniform of epitaxy, mass transfer, current drive control and full color fabrication, currently. Among the above-mentioned bottleneck, mass transfer is the toughest technique. The yield of mass transfer process is low, the reason are the inaccuracy of alignment, fragility of bonding joint, complication of circuit connection. Those factors caused the high cost of MicroLED.
This project aims to develop bonding and lift-off tecknique of mass transfer process using high power solid-state laser. The main work is to optimize and build the parameter of laser eutectic bonding and laser lift off process. In the first year, optical system designing and single die transfer will be done. In the second year, die array transfer will be done. During research, the bonding strength and surface damaged of die causing by laser lift off are the obstacles. We will verify and optimize the problem by impact test and surface profile measurement. Thus, decrease the thermal factor, expect to improve the yield of transfer process
MicroLED被視為下一世代的顯示單元，然而目前MicroLED製程上面對臨磊晶均勻度、巨量轉移、電流驅動控制及全彩化製作等技術瓶頸，其中尤以巨量轉移之技術困難最為艱鉅，主要受限轉移之良率偏低、對位速度/精度/成本比不佳、及大面積生產有效度等問題，使得MicroLED之生產成本居高不下。對此，在巨量轉移製程上，雷射的運用是被經常討論的。
本計畫目標是協助國內二極體高功率雷射模組企業，發展運用於巨量轉移製程中之接合技術、剝離技術。其中的工作重點是進行雷射模組對試量產級MicroLED之共晶接合與玻璃基板等兩個動作之製成參數建立與優化。第一年進行光路系統設計及單一晶粒轉移，時程會跨到第二年前半；第二年進行晶粒陣列的批量轉移，測試雷射模組在LED移動時的考慮因子。執行中會面臨「接合強度」及「雷射剝離造成晶粒表面損傷」的困難，對此將分別藉由衝擊試驗及表面輪廓量測，進行雷射參數對共晶接合強度與對剝離基板之最佳化，以降低加工熱影響之因素，期望提升轉移過程的良率。
