奈米工程與微系統研究所　書報討論

Seminar of Inst. NanoEngineering and MicroSystems

林育中 教授

Yeu-Chung Lin

Visiting Scholar, National Taiwan University

STT MRAM and its impact to semiconductor industry

Abstract

Both standalone and embedded STT MRAM are demonstrated recently and may enter into mass production in 2017. Standalone STT MRAM may be applied to systems which require high write speed, low power consumption and non-volatility; embedded STT MRAM will emerge as a replacement of embedded flash first and eventually take place of cache of different levels in future process nodes. Either SOT or VCMA is required to further improve the power consumption and write speed performance. 3D structure of MTJ is also demanded to meet the requirement of scalability. The allocation between research and development deserves a rethinking.

2016年12月19日(週一)，1530－1720，工程一館108室

15:30-17:20 on Dec. 19 (Mon), 2016 in Room 108 of Eng. Building I

Contact: Wei-Chih Wang (03-5742488)