奈米工程與微系統研究所 書報討論
Seminar of Inst. NanoEngineering and MicroSystems
莊賀喬 教授
Ho-Chiao Chuang
National Taipei University of Technology
The fabrication of TSV Chip and ultra-high aspect ratio nanowires
by supercritical CO2 electroplating process
Abstract
This study uses supercritical electroplating for the filling of through silicon vias (TSVs) in chips. The present study utilizes the inductively coupled plasma reactive ion etching (ICP RIE) process technique to etch the TSVs and discusses different supercritical-CO2 electroplating parameters, such as the supercritical pressure, the electroplating current density’s effect on the TSV Cu pillar filling time, the I–V curve, the electrical resistance and the hermeticity. In addition, the results for all the tests mentioned above have been compared to results from traditional electroplating techniques. In addition, this study also conducts tests for the electrical properties, which include the measurement of the electrical resistance of the TSV at both ends in the horizontal direction, followed by the passing of a high current (10 A, due to probe limitations) to check if the TSV can withstand it without burnout. Finally, the TSV is cut in half in cross-section to observe the filling of Cu pillars by the supercritical electroplating and check for voids. The important characteristic of this study is the use of the supercritical electroplating process without the addition of any surfactants to aid the filling of the TSVs, but by taking advantage of the high permeability and low surface tension of supercritical fluids to achieve our goal.
Moreover, this study also utilizes the supercritical and post supercritical electroplating technique, to fabricate copper nano wires inside ultra-high aspect ratio Anodic Aluminum Oxide templates (AAO templates). Comparisons of the electroplating capabilities and results were made between these methods and the more common traditional electroplating techniques. Under identical experimental conditions and on ultra-high aspect ratio AAO template with thickness of 60µm (aspect ratio of 1:490). This study also discusses the electroplating quality of the copper nano wires. In addition, the supercritical fluid-enabled electroplating process utilized for these experiments does not need addition of any surfactants to aid filling of the structures, but only relies on the intrinsic properties of supercritical fluids to achieve complete filling of nano holes, and because there are no surfactants, we can achieve higher degree of purity in the copper nano wires.
2016年11月28日(週一),1530-1720,工程一館108室
15:30-17:20 on Nov. 28 (Mon), 2016 in Room 108 of Eng. Building I
Contact: Wei-Chih Wang (03-5742488)
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